Fabrication and performance characteristics of 1. 55-. mu. m InGaAsP multiquantum well ridge guide lasers
We report the fabrication and performance characteristics of InGaAsP ridge waveguide lasers with multiquantum well (MQW) active layers emitting near 1.55 ..mu..m. The active region has four active wells (1.55 ..mu..m InGaAsP) and three barriers (1.3 ..mu..m InGaAsP). The thicknesses of the active wells and the barrier layers are approx.250 A. The 360-..mu..m-long lasers have threshold currents in the range 60--80 mA at 30 /sup 0/C, external differential quantum efficiency approx.25% at 30 /sup 0/C, and T/sub 0/approx.70 K. The modulation bandwidths of the lasers are approx.1.5 GHz and they exhibit less frequency chirping than similar lasers with conventional double heterostructure (DH) active layer. Since frequency chirp limits the performance of high bit rate long haul fiber communication system at 1.55 ..mu..m, we believe MQW lasers offer an advantage over conventional DH lasers.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6007477
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DIMENSIONS
EFFICIENCY
ELECTRIC CURRENTS
FABRICATION
FIBER OPTICS
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MODULATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THICKNESS
THRESHOLD CURRENT