Long wavelength InGaAsP (lambdaapprox. 1. 3. mu. m) modified multiquantum well laser

Journal Article · Sat Jun 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95750· OSTI ID:5985989

Dutta, N K; Napholtz, S G; Yen, R; Wessel, T; Shen, T M; Olsson, N A

The fabrication and performance characteristics of InGaAsP (lambdaapprox.1.3 ..mu..m) double channel planar buried heterostructure lasers with multiquantum well (MQW) active layers are reported. The MQW structure has lambda/sub g/approx.1.3 ..mu..m InGaAsP active wells and lambda/sub g/approx.1.03-..mu..m InGaAsP barrier layers. The lasers have threshold current of approx.20 mA at 30 /sup 0/C and external differential quantum efficiencies of approx.0.2 mW/mA/facet at 30 /sup 0/C. The temperature dependence of threshold current is characterized by T/sub 0/approx.100 K both under electrical and optical pumping. The lasers have been operated to 110 /sup 0/C and up to approx.30 mW/facet at 25 /sup 0/C. The measured dynamic linewidth under modulation is approx.2 smaller than that for conventional double heterostructure lasers. The lower temperature dependence of threshold current and smaller dynamic linewidth makes real index-guided InGaAsP MQW active layer lasers potentially attractive for many system applications.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5985989
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRICAL PUMPING
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LINE WIDTHS
MEDIUM TEMPERATURE
METALS
MODULATION
OPTICAL PUMPING
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PUMPING
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT