Fabrication and lasing characteristics of 1. 3-. mu. m InGaAsP multiquantum-well lasers

Journal Article · Wed Jan 01 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336832· OSTI ID:6346221

Sasai, Y; Hase, N; Ogura, M; Kajiwara, T

This paper reports the fabrication and lasing characteristics of 1.3-..mu..m InGaAsP multiquantum-well (MQW) buried heterostructure (BH) lasers grown by liquid-phase epitaxy (LPE) technique. The MQW active region consists of five InGaAsP well layers (lambda/sub g/ = 1.3-..mu..m, L/sub z/approx.200 A and InGaAsP barrier layers (lambda/sub g/ = 1.1 ..mu..m, dapprox.400--600 A). These lasers have threshold currents of 15--20 mA at 25 /sup 0/C, external quantum efficiencies of 50% at 25 /sup 0/C, and T/sub 0/ values of 130--145 /sup 0/K in the temperature range of less than 300 /sup 0/K. The beam divergences perpendicular and parallel to the junction plane were in the narrow range of 10--13/sup 0/. Furthermore, the polarization-dependent gain-current relationship between the TE and TM mode of InGaAsP MQW lasers has been investigated in detail for the first time.

• Research Organization: Central Research Laboratory, Matsushita Electric Industrial Co., Ltd., Yagumo Nakamachi 3-15, Moriguchi-shi, Osaka 570, Japan
• OSTI ID: 6346221
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
LAYERS
LIQUID PHASE EPITAXY
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE EFFECTS
THRESHOLD CURRENT