InGaAsP distributed feedback multiquantum well laser
The fabrication and performance characteristics of 1.3 ..mu..m InGaAsP distributed feedback (DFB) lasers with multiquantum well (MQW) active layers are reported. The lasers are of the double channel planar buried heterostructure type and utilize a second order grating with a periodicity of approx.3900 A for frequency selective feedback. The lasers have threshold currents in the range 25--35 mA at 30 /sup 0/C and external differential quantum efficiencies of 0.2 mW/mA/facet at 30 /sup 0/C. The temperature dependence of threshold current is characterized by a T/sub 0/ value of 95--100 K. The lasers have been operated to an output power of 19 mW in a single frequency. The measured dynamic linewidth under modulation is a factor of 2 smaller than that for regular double heterostructure lasers. The lower temperature dependence of threshold current and smaller dynamic linewidth make real index guided InGaAsP DFB MQW active layer lasers attractive for many system applications.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5725185
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:21; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
ELECTROMAGNETIC RADIATION
ENERGY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRATINGS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LINE WIDTHS
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD ENERGY