Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers

Journal Article · Mon Dec 31 23:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95835· OSTI ID:6186206

Dutta, N K; Napholtz, S G; Yen, R; Brown, R L; Shen, T M; Olsson, N A; Craft, D C

We report the fabrication and performance characteristics of InGaAsP double channel planar buried heterostructure (DCPBH) lasers with multiquantum well active layers emitting at 1.3 ..mu..m. These lasers have threshold currents in the range 40--50 mA at 30 /sup 0/C, external differential quantum efficiencies of approx.50% at 30 /sup 0/C, and T/sub 0/ values approx.160--180 K in the temperature range 10--60 /sup 0/C. Under optical pumping the measured T/sub 0/ are in the range 100--150 K. The lasers operate in a single transverse mode up to high powers (>10 mW/facet), can be modulated at approx.2 Gb/s, and exhibit less frequency chirping than similar lasers with conventional active layers. The observed high T/sub 0/ and smaller chirp make DCPBH multiquantum well lasers potentially attractive for system applications.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6186206
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
FREQUENCY MODULATION
INFORMATION
LASERS
MODULATION
NUMERICAL DATA
OPERATION
OPTICAL PUMPING
PERFORMANCE
POWER
PUMPING
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE EFFECTS
THRESHOLD CURRENT
USES