IR diode lasers made by molecular beam epitaxy of PbEuSe

Conference · Sat Oct 01 00:00:00 EDT 1988 · AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA)

OSTI ID:5648443

Tacke, M; Norton, P; Bottner, H; Lambrecht, A; Preier, H M ^[1]

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1. Fraunhofer-Institut fuer Physikalische Messtechnik, D-7800 Freiburg, West Germany (DE)

Double Hetero (DH) Structures and Graded Index (GRIN) Structures were made from the ternary material Pb{sub 1{minus}{ital x}}Eu{sub {ital x}}Se by variation of the Europium content. The lattice mismatch of these structures does not influence the diode operation notably. Lasers were made with emission wavelength between {lambda}=8 {mu}m and 3.2 {mu}m. DH lasers with active layers from PbSe show the highest cw operation temperatures reported for DH-lasers in the mid IR: up to 154 K with currents below 0.5 A. Such lasers cover a spectral range from {lambda}=8.2 {mu}m to 5.8 {mu}m.

• OSTI ID: 5648443
• Report Number(s): CONF-871147--
• Journal Information: AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA), Journal Name: AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA) Vol. 172:1; ISSN 0094-243X; ISSN APCPC
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
INFRARED RADIATION
INTERMEDIATE INFRARED RADIATION
LASERS
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT