Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb/sub 1-//sub x/Eu/sub x/Se

Journal Article · Mon Dec 05 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100247· OSTI ID:6658892

Tacke, M; Spanger, B; Lambrecht, A; Norton, P R; Boettner, H

Infrared (IR) diode lasers have been made by growing heterostructures or graded structures of Pb/sub 1-//sub x/Eu/sub x/Se. This IV-VI ternary has a small lattice variation within the IR band-gap range. Double-heterostructure lasers with PbSe active layers were operated up to T = 174 K cw and 220 K pulsed mode; they reached the highest cw operation temperature reported for this type of laser in the mid IR. Their tuning range was 7.8--5.7 ..mu..m cw. Lasers with the ternary as the active layer were operated up to the shortest wavelength of 2.88 ..mu..m at 100 K cw. At present lasers made by molecular beam epitaxy of this material cover the widest wavelength region at T>77 K around 5 ..mu..m in cw operation.

• Research Organization: Fraunhofer-Institut f uer Physikalische Messtechnik, Heidenhofstrasse 8, D-7800 Freiburg, Federal Republic of Germany
• OSTI ID: 6658892
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
DATA
DESIGN
ELECTROMAGNETIC RADIATION
EPITAXY
EUROPIUM COMPOUNDS
EUROPIUM SELENIDES
EXPERIMENTAL DATA
FABRICATION
HETEROJUNCTIONS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
LEAD SELENIDES
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
RADIATIONS
RARE EARTH COMPOUNDS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TUNING