Continuous operation of visible-spectrum In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ laser diodes (6280 A, 77 K)

Journal Article · Sun Oct 01 00:00:00 EDT 1978 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1978.1069676· OSTI ID:6035356

Chin, R ^[1]; Chichijo, H; Holonyak, N Jr; Rossi, J A; Keune, D L; Finn, D

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1. Univ. of Illinois, Urbana

Stripe-geometry In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ (x approx. = 0.84 to 0.86, z approx. = 0.38 to 0.42) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs/sub 1-y/P/sub y/ substrates, are described that operate (CW, 77 K) in the visible at lambda approx. = 6280-6360 A with differential quantum efficiency next approx. 28% and power output in the range 1-7mW.

• OSTI ID: 6035356
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 14:10; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
VISIBLE RADIATION