LPE In/sub1 - x/Ga/sub x/P/sub 1-2/As/sub z/ (x= approx. 0. 12, z= approx. 0. 26) DH laser with multiple thin-layer (<500 A) active region
Journal Article
·
· Appl. Phys. Lett.; (United States)
A liquid-phase-epitaxial (LPE) double-heterojunction (DH) laser structure with an approx.1-..mu..m ''active region'' consisting of approximately-greater-than 20 In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ and InP lattice-matched thin layers is described. The thin-layer dimensions are small enough (<500 A) to make quantum size effects relevant.
- Research Organization:
- Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 7110506
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Near-infrared In/sub 1-x/Ga/sub x/P/sub 1-x/As/sub z/ double-heterojunction lasers: constant-temprature LPE growth and operation in an external-gratng cavity
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Single thin-active-layer visible-spectrum In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ heterostructure lasers
Journal Article
·
Mon Aug 01 00:00:00 EDT 1977
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:5376968
Single and multiple thin-layer (L/sub z/9 or approx. =400 A) In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/-InP heterostructure light emitters and lasers (lambdaapprox. 1. 1. mu. m, 77 /sup 0/K)
Journal Article
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Sat Dec 31 23:00:00 EST 1977
· J. Appl. Phys.; (United States)
·
OSTI ID:5338337
Single thin-active-layer visible-spectrum In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ heterostructure lasers
Journal Article
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Fri Mar 31 23:00:00 EST 1978
· J. Appl. Phys.; (United States)
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OSTI ID:5093413
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
EMISSION SPECTRA
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION DIODES
LASERS
LAYERS
OPTICAL MODES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
EMISSION SPECTRA
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION DIODES
LASERS
LAYERS
OPTICAL MODES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION