Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride Al{sub x}Ga{sub 1-x}As:Si/GaAs(100) heterostructures
- Voronezh State University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
The X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al{sub x}Ga{sub 1-x}As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si/GaAs(100) structures doped with Si to a content of up to {approx}1 at % are reported. It is shown that, in the homoepitaxial heterostructures, the formation of alloys with Si yields a decrease in the crystal lattice parameters of the epitaxial layer and a negative lattice mismatch with the single-crystal substrate ({Delta}a < 0). At the same time, the formation of quaternary alloys in the Al{sub x}Ga{sub 1-x}As:Si/GaAs(100) heterostructures is not accompanied by any pronounced strains in the crystal lattice. By introducing Si into the epitaxial layers of these heterostructures, it is possible to attain complete matching of crystal lattice parameters of the film and substrate in the appropriately chosen technological conditions of growth of the epitaxial layers.
- OSTI ID:
- 22004832
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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