Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions
- Voronezh State University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
X-ray diffraction, scanning electron microscopy, and IR reflectance spectroscopy were used to study properties of epitaxial low-temperature hydride-MOCVD AlGaAs/GaAs (100) heterostructures. It was found that the variation in the AlGaAs alloy lattice's parameter with Al content does not obey the classical Vegard's law, and the lattice parameters are smaller than those of GaAs.
- OSTI ID:
- 21562390
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DEPOSITION
DIFFRACTION
DISPERSIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOMOGENEOUS MIXTURES
HYDRIDES
HYDROGEN COMPOUNDS
LATTICE PARAMETERS
MICROSCOPY
MIXTURES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SCATTERING
SOLID SOLUTIONS
SOLUTIONS
SPECTROSCOPY
SURFACE COATING
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
VEGARD LAW
X-RAY DIFFRACTION
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DEPOSITION
DIFFRACTION
DISPERSIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOMOGENEOUS MIXTURES
HYDRIDES
HYDROGEN COMPOUNDS
LATTICE PARAMETERS
MICROSCOPY
MIXTURES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SCATTERING
SOLID SOLUTIONS
SOLUTIONS
SPECTROSCOPY
SURFACE COATING
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
VEGARD LAW
X-RAY DIFFRACTION