Molecular-beam epitaxy and characteristics of GaN{sub y}As{sub 1-x-y}Bi{sub x}

Journal Article · Thu Sep 01 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2032618· OSTI ID:20714081

Wei, Huang; Oe, Kunishige; Gan, Feng; Yoshimoto, Masahiro ^[1]

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1. Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585 (Japan)

GaN{sub y}As{sub 1-x-y}Bi{sub x} alloys were grown by molecular-beam epitaxy using solid Ga, Bi, and As sources and nitrogen radicals generated from nitrogen gas in rf plasma. Changing the growth temperature is found to be a convenient method for controlling the GaBi molar fraction in the alloy reproducibly. The photoluminescence (PL) spectra show that the PL peak energy of GaN{sub y}As{sub 1-x-y}Bi{sub x} alloy decreased with increasing GaBi and GaN molar fractions. The redshift coefficients of {approx}62 meV/%Bi and {approx}130 meV/%N at the PL peak energy of GaN{sub y}As{sub 1-x-y}Bi{sub x} were observed at room temperature. The temperature dependence of the PL peak energy in the temperature range of 150-300 K is much smaller than the temperature dependence of the band gap of InGaAsP. The temperature coefficients of GaAs{sub 1-x}Bi{sub x} and GaN{sub y}As{sub 1-x-y}Bi{sub x} band gaps are governed by the GaBi molar fraction and they decrease with increasing GaBi molar fraction. GaN{sub y}As{sub 1-x-y}Bi{sub x} alloys with different PL peak energies and lattice matched to GaAs substrates were obtained. The photoluminescence peak energy was located at a predicted wavelength for the sample lattice matched to GaAs which was found to have the structure of Ga(N{sub 0.33}Bi{sub 0.67}){sub z}As{sub 1-z}.

• OSTI ID: 20714081
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC ALLOYS
BISMUTH ALLOYS
CRYSTAL GROWTH
ENERGY GAP
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM NITRIDES
MEV RANGE 10-100
MEV RANGE 100-1000
MOLECULAR BEAM EPITAXY
NITROGEN ADDITIONS
PHOTOLUMINESCENCE
RADICALS
RED SHIFT
SUBSTRATES
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS