Time-resolved photoluminescence studies of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y}

Journal Article · Mon Jan 10 04:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125698· OSTI ID:20215031

Mair, R A ^[1]; Lin, J Y ^[1]; Jiang, H X ^[1]; Jones, E D ^[2]; Allerman, A A ^[2]; Kurtz, S R ^[2]

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1. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} (x{approx}0.03, y{approx}0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07-0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations. (c) 2000 American Institute of Physics.

• OSTI ID: 20215031
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER LIFETIME
CHEMICAL VAPOR DEPOSITION
EPITAXY
EXCITONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
INDIUM ARSENIDES
NITRIDES
PHOTOLUMINESCENCE