Time-resolved photoluminescence studies of Al{sub x}Ga{sub 1-x}N alloys

Journal Article · Mon Mar 06 04:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126000· OSTI ID:20215574

Kim, H S ^[1]; Mair, R A ^[1]; Li, J ^[1]; Lin, J Y ^[1]; Jiang, H X ^[1]

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1. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)

The optical properties of Al{sub x}Ga{sub 1-x}N alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al content, the low-temperature PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al{sub x}Ga{sub 1-x}N alloys. The Al-content dependence of the energy-tail-state distribution parameter E{sub 0}, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and, consequently, increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed. (c) 2000 American Institute of Physics.

• OSTI ID: 20215574
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
LASER MATERIALS
PHOTOLUMINESCENCE
SEMICONDUCTOR DEVICES