Growth and optical properties of In{sub x}Al{sub y}Ga
In{sub x}Al{sub y}Ga{sub 1-x}N quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. It was observed that the dominant optical transition at low temperatures in In{sub x}Al{sub y}Ga{sub 1-x}N quaternary alloys was due to localized exciton recombination, while the localization effects in In{sub x}Al{sub y}Ga{sub 1-x}N quaternary alloys were combined from those of InGaN and AlGaN ternary alloys with comparable In and Al compositions. Our studies have revealed that In{sub x}Al{sub y}Ga{sub 1-x}N quaternary alloys with lattice matched with GaN epilayers (y{approx}4.8x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensity (or quantum efficiency) in In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloys than that of GaN. The quantum efficiency of In{sub x}Al{sub y}Ga{sub 1-x}N quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205248
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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