Photoresponsivity of ultraviolet detectors based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloys

Journal Article · Mon Aug 07 04:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1306540· OSTI ID:20217171

Oder, T N ^[1]; Li, J ^[1]; Lin, J Y ^[1]; Jiang, H X ^[1]

---

1. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary over AlGaN ternary alloys for UV detector applications are also discussed. (c) 2000 American Institute of Physics.

• OSTI ID: 20217171
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 77; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
INDIUM NITRIDES
PHOTODETECTORS
SPECTRAL RESPONSE
ULTRAVIOLET RADIATION