AlGaInN quaternary alloys by MOCVD

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:394955

McIntosh, F G; Piner, E; Boutros, K; Roberts, J C; He, Y; El-Masry, N; Bedair, S M ^[1]; Moussa, M ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States)
2. Air Defense Academy, Alexandria (Egypt)

AlGaInN quaternary alloy based devices can cover the emission wavelength from deep UV to red. This quaternary alloy also offers lattice matched heterostructures for both optical and microwave devices. The authors report on the MOCVD growth of Al{sub x}Ga{sub 1{minus}x{minus}y}In{sub y}N (0 < x < 0.12), (0 < y < 0.15) at 750 C on sapphire substrates, using TMG, EDMIn, TMAl and NH{sub 3} precursors. Chemical composition, lattice constants and bandgaps of the grown films were determined by EDS, X-ray diffraction and room temperature PL. Data indicates that the lattice constants can also be deduced using Vegard`s law, indicating a solid solution of this alloy. PL showed band edge emission, however emission from deep levels was also observed. Optimized growth conditions and heterostructures using this quaternary alloy will be presented.

• OSTI ID: 394955
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
AMMONIA
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
INTERFACES
LATTICE PARAMETERS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY