MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics[Metal Organic Vapor Phase Epitaxy, Ultraviolet]
The authors report the growth and characterization of quaternary AlGaInN. A comparison of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables one to explore the contours of constant-PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351 nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- Sponsoring Organization:
- US Department of Energy
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20104575
- Country of Publication:
- United States
- Language:
- English
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