The Study of Energy Band Gap of In{sub x}Al{sub y}Ga{sub 1-x-y}N Quaternary Alloys using UV-VIS Spectroscopy

Journal Article · Mon Jun 01 04:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3160125· OSTI ID:21308686

Raof, N H. Abd.; Ng, S S; Hassan, H Abu; Hassan, Z ^[1]

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1. Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

Quaternary In{sub x}Al{sub y}Ga{sub 1-x-y}N alloys with indium (In) mole fraction x ranging from 0.01 to 0.10 and constant aluminum (Al) mole fraction y = 0.06, were grown by molecular beam epitaxy. The energy band gaps of InAlGaN alloys were investigated using UV-VIS spectroscopy under room temperature. The energy band gap decreases with increasing In composition from 0.01 to 0.08. This trend is expected since the incorporation of In lowers the energy band gap of Al{sub 0.06}Ga{sub 0.94}N(3.72 eV). However, for InAlGaN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer, contributed by incomplete substitutions of Ga atoms by the In atoms, thus retaining a much richer GaN structure. Finally, we investigate the bowing parameter appears also to be very sensitive on In content. We obtained b 50.08 for quaternary InAlGaN alloys.

• OSTI ID: 21308686
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1136; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ALUMINIUM NITRIDES
CONCENTRATION RATIO
ELECTRONIC STRUCTURE
ENERGY GAP
EV RANGE
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
QUATERNARY ALLOY SYSTEMS