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The Study of Energy Band Gap of Al{sub x}In{sub y}Ga{sub 1-x-y}N Quaternary Alloys Using UV-VIS Spectroscopy

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3469662· OSTI ID:21415266
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  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia)
Optical characterizations have been performed on high-quality quaternary Al{sub x}In{sub y}Ga{sub 1-x-y}N thin films using UV-VIS spectroscopy at room temperature. The Al{sub x}In{sub y}Ga{sub 1-x-y}N films were grown on c-plane (0001) sapphire substrates with AlN as buffer layers using molecular beam epitaxy (MBE) technique with aluminum (Al) mole fraction x ranging from 0.0 to 0.2 and constant indium (In) mole fraction y = 0.1. The UV-VIS measurements indicated that the energy band gap of the quaternary films increases with increasing Al composition from 0.05 to 0.2. This trend is expected since the incorporation of Al increases the energy band gap of ternary In0.1Ga0.90N (3.004eV). We have also investigated the bowing parameter of the variation of energy band gaps and found it to be very sensitive on Al content. A value of b=7 eV has been obtained for our quaternary Al{sub x}In{sub y}Ga{sub 1-x-y}N alloys.
OSTI ID:
21415266
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1250; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English