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Polarized Infrared Reflectance Studies of Quaternary In{sub 0.04}Al{sub 0.06}Ga{sub 0.90}N

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3469664· OSTI ID:21431091
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  1. Nano-optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800, USM, Penang, (Malaysia)
Group III-nitride has re-gained considerable interest recently as wide direct band gap semiconductor materials for opto-electronic and high power devices. The quaternary InAlGaN have great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. In this study, we report for the first time the polarized infrared (IR) reflectance studies of quaternary In{sub 0.04}Al{sub 0.06}Ga{sub 0.90}N by using Fourier transform infrared spectroscopy of Perkin-Elmer. The quaternary In{sub 0.04}Al{sub 0.06}Ga{sub 0.90}N epilayers was grown on sapphire by molecular beam epitaxy. The polarized IR reflectance spectra obtained at incident angle of 15 deg. were then compared with modeling spectrum of damped harmonic oscillator. Through this study, the transverse and longitudinal optical phonon modes of quaternary In{sub 0.04}Al{sub 0.06}Ga{sub 0.90}N epilayers were obtained.
OSTI ID:
21431091
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1250; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English