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XRD Analyses of In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N(0{<=}x{<=}0.20) Quaternary Alloys

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3469663· OSTI ID:21410535
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  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
We present the structural properties of quaternary In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N(0{<=}x{<=}0.20) alloys grown on sapphire substrate by molecular beam epitaxy. High resolution X-ray diffraction (HR-XRD) analyses were used to investigate the phase and crystalline quality of quaternary In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N. From the XRD phase analysis, it is confirmed that the In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N films had wurtzite structure and without any phase separation. In addition, it is found that the Bragg angle of the (0002)In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N peak gradually increases as the Al compositions increases, indicating the decrease in the lattice constant c of the In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N quaternary alloys. Apart from that, the composition of In{sub 0.10}Al{sub x}Ga{sub 0.90-x}N epilayers is determined by applying the Vegard's law. Finally, the variation of the crystalline quality as a function of Al composition is investigated through the XRD rocking curve analyses.
OSTI ID:
21410535
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1250; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English