Determination of the Al Composition of Al{sub x}Ga{sub 1-x}N Thin Films By Means Of EDX and XRD Techniques

Journal Article · Wed Jul 07 04:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3469677· OSTI ID:21410541

Ng, S S; Hassan, Z; Hassan, H Abu

In this paper, the determinations of Al composition x of Al{sub x}Ga{sub 1-x}N(0{<=}x{<=}1) thin films by means of the energy dispersive X-ray (EDX) and X-ray diffraction (XRD) analyses are reported. Through these non-destructive and contactless techniques, a large probed area of the Al{sub x}Ga{sub 1-x}N samples can be selected. Consequently, the uncertainty due to the inhomogeneity of the Al composition can be avoided. For EDX measurements, the Al composition is calculated based on the weight percent of the Al and Ga elements, while that in the XRD measurements is based on lattice constant c and Vegard's law. The results from these two independent techniques are in good agreement with each other.

• OSTI ID: 21410541
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1250; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
FILMS
GALLIUM COMPOUNDS
IONIZING RADIATIONS
LATTICE PARAMETERS
MATERIALS TESTING
NITROGEN COMPOUNDS
NONDESTRUCTIVE TESTING
RADIATIONS
SCATTERING
TESTING
THIN FILMS
VEGARD LAW
X RADIATION
X-RAY DIFFRACTION