Effects of molecular beam epitaxy growth conditions on composition and optical properties of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y}

Journal Article · Mon Mar 12 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3695066· OSTI ID:22025465

Zhong, Y; Dongmo, P B; Zide, J M. O. ^[1]; Petropoulos, J P ^[2]

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1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
2. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

We describe the growth conditions of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y} (lattice-mismatched and matched) on InP substrates by molecular beam epitaxy and the resulting properties. Due to their anomalously narrow bandgaps and the presence of bismuth, these materials are promising for optoelectronics and thermoelectrics. Low growth temperature and moderate As/Bi beam equivalent pressure ratios are beneficial for Bi incorporation, in good qualitative agreement with GaBi{sub y}As{sub 1-y} on GaAs. Up to 6.75% bismuth is incorporated. High resolution x-ray diffraction and reciprocal space mapping show that In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y} samples exhibit good crystalline quality and zero relaxation. The band gap is reduced in agreement with theoretical predictions. Lattice-matched samples have been produced with lattice mismatch {<=}0.21%.

• OSTI ID: 22025465
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 100; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BAND THEORY
BISMUTH
BISMUTH COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL GROWTH
ENERGY GAP
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
RELAXATION
SEMICONDUCTOR MATERIALS
SUBSTRATES
X-RAY DIFFRACTION