Identification of the mechanism of stacking fault nucleation in In{sub x}Ga{sub 1-x}As and In{sub y}Al{sub 1-y}As layers grown by MBE on InP substrates
Conference
·
OSTI ID:405539
- Universitat de Barcelona (Spain)
This work presents three different origins of stacking faults in In{sub x}Ga{sub 1-x}As/In{sub y}Al{sub 1-y}As/InP matched and mismatched systems, depending on the growth conditions: as a stacking error during the growth, as a consequence of the dissociation of misfit dislocations, and finally as a proper strain relieving mechanism. The occurrence of these different mechanisms are discussed in both homogeneous samples and samples with composition modulation.
- OSTI ID:
- 405539
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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