Gas source molecular beam epitaxy of Ga/sub x/In/sub 1//sub -x/P/sub y/As/sub 1//sub -y/
Journal Article
·
· J. Appl. Phys.; (United States)
The use of P/sub 2/ and As/sub 2/ beams generated by several different beam sources for the growth of InP, GaAs, and Ga/sub x/In/sub 1-x/P/sub y/As/sub 1-y/ has been investigated. Accommodation coefficients for As/sub 2/ and P/sub 2/ were determined for heated GaAs and InP surfaces. It is demonstrated that a source utilizing decomposition of the hydrides over the range 200--2000 Torr and providing a leak of the resulting P/sub 2/, As/sub 2/, and H/sub 2/ molecules into a molecular beam epitaxy (MBE) system can be used for the growth of Ga/sub x/In/sub 1-x/P/sub y/As/sub 1-y/ layers lattice matched to InP. Heterostructure lasers emitting at 1.5 ..mu..m with room temperature threshold current densities of 2000 A/cm/sup 2/ and differential quantum efficiencies of 17%--19% were fabricated to demonstrate the quality of the epitaxy by this method. Initial studies of the cracking of AsH/sub 3/ and PH/sub 3/ at low pressures in contact with heated Ta suggest that Ta acts as a catalyst for the decomposition and that low pressure beam sources may also be useful for gas source MBE.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6875815
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:10; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CATALYTIC CRACKING
CHEMICAL REACTIONS
CRACKING
CURRENT DENSITY
CURRENTS
DECOMPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
METALS
MOLECULAR BEAM EPITAXY
NONMETALS
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PNICTIDES
PYROLYSIS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
TANTALUM
THERMOCHEMICAL PROCESSES
THRESHOLD CURRENT
TRANSITION ELEMENTS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CATALYTIC CRACKING
CHEMICAL REACTIONS
CRACKING
CURRENT DENSITY
CURRENTS
DECOMPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
METALS
MOLECULAR BEAM EPITAXY
NONMETALS
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PNICTIDES
PYROLYSIS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
TANTALUM
THERMOCHEMICAL PROCESSES
THRESHOLD CURRENT
TRANSITION ELEMENTS