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Two-dimensional phase separation in In sub 1 minus x Ga sub x As sub y P sub 1 minus y epitaxial layers

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1]; ;  [2]
  1. Department of Materials Science, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
  2. Bellcore, Red Bank, New Jersey 07701 (United States)

Microstructures of lattice-matched In{sub 1{minus}{ital x}}Ga{sub {ital x}}As{sub {ital y}}P{sub 1{minus}{ital y}} epitaxial layers, grown on (001), (110), (111){sub {ital A}}, and (123) InP substrates by use of liquid-phase epitaxy, have been examined in detail by transmission electron microscopy. Results indicate that the fine-scale speckle microstructure is caused by two-dimensional phase separation occurring at the surface while the layer is growing; decomposition along the growth direction is not observed in either of the four cases examined. The decomposition is found to take place along those directions in the growth plane along which the elastic work associated with the transformation is a minimum. The temperature dependence of the wavelength of the fine-scale structure in (001) In{sub 1{minus}{ital x}}Ga{sub {ital x}}As epitaxial layers grown by use of molecular-beam epitaxy indicates that the wavelength evolution is controlled by the surface diffusion of As atoms.

DOE Contract Number:
FG02-87ER45329
OSTI ID:
7207167
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 45:12; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English