Bond-length strain in buried Ga{sub 1{minus}x}In{sub x}As thin-alloy films grown coherently on InP(001)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
The bond lengths in a series of strained, buried Ga{sub 1{minus}x}In{sub x}As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.{copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 641501
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 73; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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