Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Diffraction anomalous fine-structure study of strained Ga{sub 1{minus}x}In{sub x}As on GaAs(001)

Journal Article · · Physical Review, B: Condensed Matter
 [1];  [2]; ; ; ;  [1]; ;  [3];  [4];  [5]
  1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. Naval Research Laboratory, Washington, DC 20375 (United States)
  3. Department of Physics, University of Washington, Seattle, Washington 98195 (United States)
  4. Department of Physics, Brooklyn College, Brooklyn, New York 11210 (United States)
  5. SFA Inc., 1401 McCormick Drive, Largo, Maryland 20774 (United States)
Diffraction anomalous fine-structure measurements performed at both the Ga and As {ital K} edges have determined the Ga-As bond length to be 2.442{plus_minus}0.005thinsp{Angstrom} in a buried, 213-{Angstrom}-thick Ga{sub 0.785}In{sub 0.215}As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.013{plus_minus}0.005thinsp{Angstrom} relative to the Ga-As bond length in bulk Ga{sub 1{minus}x}In{sub x}As of the same composition. Together with recent extended x-ray-absorption fine-structure measurements performed at the In {ital K} edge [Woicik {ital et al.}, Phys. Rev. Lett. {bold 79}, 5026 (1997)], excellent agreement is found with the uniform bond-length distortion model for strained-layer semiconductors on (001) substrates. {copyright} {ital 1998} {ital The American Physical Society}
OSTI ID:
641542
Journal Information:
Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 8 Vol. 58; ISSN 0163-1829; ISSN PRBMDO
Country of Publication:
United States
Language:
English

Similar Records

Bond-Length Distortions in Strained Semiconductor Alloys
Journal Article · Sun Nov 30 23:00:00 EST 1997 · Physical Review Letters · OSTI ID:554412

Atomic-resolution study of lattice distortions of buried In{sub x}Ga{sub 1{minus}x}As monolayers in GaAs(001)
Journal Article · Sun Oct 31 23:00:00 EST 1999 · Physical Review, B: Condensed Matter · OSTI ID:690746

Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001)
Journal Article · Mon May 01 00:00:00 EDT 2000 · Applied Physics Letters · OSTI ID:20216175