Diffraction anomalous fine-structure study of strained Ga{sub 1{minus}x}In{sub x}As on GaAs(001)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Naval Research Laboratory, Washington, DC 20375 (United States)
- Department of Physics, University of Washington, Seattle, Washington 98195 (United States)
- Department of Physics, Brooklyn College, Brooklyn, New York 11210 (United States)
- SFA Inc., 1401 McCormick Drive, Largo, Maryland 20774 (United States)
Diffraction anomalous fine-structure measurements performed at both the Ga and As {ital K} edges have determined the Ga-As bond length to be 2.442{plus_minus}0.005thinsp{Angstrom} in a buried, 213-{Angstrom}-thick Ga{sub 0.785}In{sub 0.215}As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.013{plus_minus}0.005thinsp{Angstrom} relative to the Ga-As bond length in bulk Ga{sub 1{minus}x}In{sub x}As of the same composition. Together with recent extended x-ray-absorption fine-structure measurements performed at the In {ital K} edge [Woicik {ital et al.}, Phys. Rev. Lett. {bold 79}, 5026 (1997)], excellent agreement is found with the uniform bond-length distortion model for strained-layer semiconductors on (001) substrates. {copyright} {ital 1998} {ital The American Physical Society}
- OSTI ID:
- 641542
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 58, Issue 8; Other Information: PBD: Aug 1998
- Country of Publication:
- United States
- Language:
- English
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