Bond-Length Distortions in Strained Semiconductor Alloys
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Department of Physics, Brooklyn College, Brooklyn, New York 11210 (United States)
- Department of Physics, University of Washington, Seattle, Washington 98195 (United States)
- Department of Materials Science, Northwestern University, Evanston, Illinois 60208 (United States)
- National Synchrotron Light Source, Upton, New York 11973 (United States)
Extended x-ray absorption fine structure measurements performed at In-K edge have resolved the outstanding issue of bond-length strain in semiconductor-alloy heterostructures. We determine the In-As bond length to be 2.581{plus_minus}0.004 {Angstrom} in a buried, 213 {Angstrom} thick Ga{sub 0.78} In{sub 0.22} As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.015{plus_minus}0.004 {Angstrom} relative to the In-As bond length in bulk Ga{sub 1{minus}x}In {sub x}As of the same composition; it is consistent with a simple model which assumes a uniform bond-length distortion in the epilayer despite the inequivalent In-As and Ga-As bond lengths. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 554412
- Journal Information:
- Physical Review Letters, Vol. 79, Issue 25; Other Information: PBD: Dec 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Bond-length strain in buried Ga{sub 1{minus}x}In{sub x}As thin-alloy films grown coherently on InP(001)
Extended x-ray absorption fine structure and x-ray diffraction study of strain and bond distortions in epitaxial semiconductor layers