Bond-Length Distortions in Strained Semiconductor Alloys

Journal Article · Mon Dec 01 04:00:00 EST 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.5026· OSTI ID:554412

Woicik, J C; Pellegrino, J G; Steiner, B ^[1]; Miyano, K E ^[2]; Bompadre, S G; Sorensen, L B ^[3]; Lee, T ^[4]; Khalid, S ^[5]

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1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2. Department of Physics, Brooklyn College, Brooklyn, New York 11210 (United States)
3. Department of Physics, University of Washington, Seattle, Washington 98195 (United States)
4. Department of Materials Science, Northwestern University, Evanston, Illinois 60208 (United States)
5. National Synchrotron Light Source, Upton, New York 11973 (United States)

Extended x-ray absorption fine structure measurements performed at In-K edge have resolved the outstanding issue of bond-length strain in semiconductor-alloy heterostructures. We determine the In-As bond length to be 2.581{plus_minus}0.004 {Angstrom} in a buried, 213 {Angstrom} thick Ga{sub 0.78} In{sub 0.22} As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.015{plus_minus}0.004 {Angstrom} relative to the In-As bond length in bulk Ga{sub 1{minus}x}In {sub x}As of the same composition; it is consistent with a simple model which assumes a uniform bond-length distortion in the epilayer despite the inequivalent In-As and Ga-As bond lengths. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 554412
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 25 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
BOND LENGTHS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
STRAINS
STRUCTURAL CHEMICAL ANALYSIS
SYNCHROTRON RADIATION SOURCES
X-RAY SPECTROSCOPY