Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001)

Journal Article · Mon May 01 04:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126397· OSTI ID:20216175

Nelson, E J ^[1]; Woicik, J C ^[1]; Hong, M ^[2]; Kwo, J ^[2]; Mannaerts, J P ^[2]

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1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Aa epitaxial Gd{sub 2}O{sub 3} film grown on GaAs(001). The Gd-O bond length is determined to be 2.390{+-}0.013 Aa, which corresponds to a +0.063{+-}0.013 Aa increase or a +2.7%{+-}0.6% bond-length strain relative to the bond length in a bulk Gd{sub 2}O{sub 3} powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd{sub 2}O{sub 3} with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. (c) 2000 American Institute of Physics.

• OSTI ID: 20216175
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BOND LENGTHS
EPITAXY
EXPERIMENTAL DATA
FINE STRUCTURE
GADOLINIUM OXIDES
GALLIUM ARSENIDES
NSLS
STRAINS
THIN FILMS
X-RAY SPECTRA