Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd{sub 2}O{sub 3} on GaAs(001)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Aa epitaxial Gd{sub 2}O{sub 3} film grown on GaAs(001). The Gd-O bond length is determined to be 2.390{+-}0.013 Aa, which corresponds to a +0.063{+-}0.013 Aa increase or a +2.7%{+-}0.6% bond-length strain relative to the bond length in a bulk Gd{sub 2}O{sub 3} powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd{sub 2}O{sub 3} with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216175
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 18; Other Information: PBD: 1 May 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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