Phase stability in Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}/GaSb heterostructures

Technical Report · Thu Oct 01 04:00:00 EDT 1998

DOI:https://doi.org/10.2172/307979· OSTI ID:307979

Chen, Y C; Bucklen, V; Rajan, K ^[1]; Freeman, M; Cardines, Jr, R P; Nichols, G; Sanders, P; Charache, G ^[2]

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1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
2. Lockheed Martin, Inc., Schenectady, NY (United States)

The crystallographic and microstructural characteristics of liquid phase epitaxy lattice-matched In{sub x}Ga{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb (100) heterostructures is presented. Using both transmission electron microscopy and high resolution X-ray diffraction, a variety of diffusional based phase transformations in the epitaxial films are observed, including: spinodal decomposition, compositional modulations of the order of 30 nm, and weak long range ordering. These results are interpreted in terms of the possible influence of substrate surface structure on the phase stability of epitaxial layers.

• Research Organization: Knolls Atomic Power Lab., Schenectady, NY (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
• DOE Contract Number: AC12-76SN00052
• OSTI ID: 307979
• Report Number(s): KAPL-P--000123; K--98165; CONF-981055--; ON: DE99001617
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC COMPOUNDS
CRYSTAL-PHASE TRANSFORMATIONS
EXPERIMENTAL DATA
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
LIQUID PHASE EPITAXY
MICROSTRUCTURE
PHASE DIAGRAMS
SEMICONDUCTOR MATERIALS