Phase stability in Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}/GaSb heterostructures
- Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
- Lockheed Martin, Inc., Schenectady, NY (United States)
The crystallographic and microstructural characteristics of liquid phase epitaxy lattice-matched In{sub x}Ga{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb (100) heterostructures is presented. Using both transmission electron microscopy and high resolution X-ray diffraction, a variety of diffusional based phase transformations in the epitaxial films are observed, including: spinodal decomposition, compositional modulations of the order of 30 nm, and weak long range ordering. These results are interpreted in terms of the possible influence of substrate surface structure on the phase stability of epitaxial layers.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307979
- Report Number(s):
- KAPL-P-000123; K-98165; CONF-981055-; ON: DE99001617; TRN: AHC29905%%157
- Resource Relation:
- Conference: 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
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