Phase stability in Ga{sub x}In{sub (1-x)}As{sub y}Sb{sub (1-y)}/GaSb heterostructures

Journal Article · Wed Mar 10 04:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57838· OSTI ID:21202587

Chen, Y-C; Bucklen, V; Rajan, K ^[1]; Freeman, M; Cardines, Jr, R P; Nichols, G; Sanders, P; Charache, G ^[2]

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1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
2. Lockheed-Martin, Inc., Schenectady, New York 12301-1072 (United States)

The crystallographic and microstructural characteristics of liquid phase epitaxy lattice-matched In{sub x}Ga{sub (1-x)}As{sub y}Sb{sub (1-y)}/GaSb (100) heterostructures is presented. Using both transmission electron microscopy and high resolution X-ray diffraction, a variety of diffusional based phase transformations in the epitaxial films are observed, including: spinodal decomposition, compositional modulations of the order of 30 nm, and weak long range ordering. These results are interpreted in terms of the possible influence of substrate surface structure on the phase stability of epitaxial layers.

• OSTI ID: 21202587
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 460; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ANTIMONIDES
LAYERS
LIQUID PHASE EPITAXY
MICROSTRUCTURE
PHASE STABILITY
PHASE TRANSFORMATIONS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
THERMOPHOTOVOLTAIC CONVERSION
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION