GaInAsP/InP heterostructure lasers emitting at 1. 5. mu. m and grown by gas source molecular beam epitaxy

Journal Article · Sat Apr 14 23:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94918· OSTI ID:5133563

Panish, M B; Temkin, H

Double heterostructure and separate confinement heterostructure lasers of Ga/sub x/In/sub 1-x/As/sub 1-y/P/sub y/ lattice matched to InP and emitting at 1.5 ..mu..m have been grown by molecular beam epitaxy utilizing the decomposition of AsH/sub 3/ and PH/sub 3/ as a source of As/sub 2/ and P/sub 2/ molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy (MBE) wafers had pulsed room-temperature threshold current densities (roughly-equal2000 A/cm/sup 2/) and differential quantum efficiencies (17%--19%) that are comparable to state of the art 1.5-..mu..m broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material.

• Research Organization: AT and T Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5133563
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLITUDES
ARSENIC COMPOUNDS
CHEMICAL REACTIONS
DATA
DECOMPOSITION
EFFICIENCY
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FLUIDS
GALLIUM COMPOUNDS
GASES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
LASERS
MOLECULAR BEAM EPITAXY
NEAR INFRARED RADIATION
NUMERICAL DATA
PHOSPHORUS COMPOUNDS
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY