1. 3-. mu. m wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report the first successful preparation of current injection GaInAsP/InP double heterostructure lasers operating at 1.3 ..mu..m by molecular beam epitaxy. The median threshold current density J/sub th/ is 3.5 kA/cm/sup 2/, while the lowest J/sub th/ is 1.8 kA/cm/sup 2/ for broad-area Fabry--Perot diodes of 380 x 200 ..mu..m and an active layer thickness of 0.2 ..mu..m. The threshold current-temperature dependence is described very closely by exp (T/T/sub 0/) with T/sub 0/ of 70--87 K in the temperature range 10/sup 0/--65 /sup 0/C. Elemental As and P (red phosphorus) were used as the primary molecular beam sources for deriving the As/sub 2/ and P/sub 2/ beams. In addition, the As and P ovens were equipped with recharge interlock systems. As a result, the growth chamber was always maintained in ultrahigh vacuum condition even during As and P recharge.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 7080234
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL GROWTH
CURRENT DENSITY
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
EQUATIONS
EXPERIMENTAL DATA
FABRICATION
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
INTERFEROMETERS
JUNCTIONS
LASERS
MATHEMATICAL MODELS
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THICKNESS
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL GROWTH
CURRENT DENSITY
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
EQUATIONS
EXPERIMENTAL DATA
FABRICATION
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
INTERFEROMETERS
JUNCTIONS
LASERS
MATHEMATICAL MODELS
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THICKNESS
THRESHOLD CURRENT