Be-implanted GaInAsP/InP double heterojunction laser diodes

Journal Article · Tue Feb 01 04:00:00 EST 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071821· OSTI ID:5862159

Donnelly, J P; Liau, Z L; Walpole, J N

Beryllium ion implantation has been used to fabricate broad-area GaInAsP/InP laser diodes operating at a wavelength of 1.3 ..mu..m, which have threshold current densities comparable to those obtained using conventional Zn doping during the epitaxial growth process. Both a Be-implant schedule which results in minimal diffusion of the implanted Be and one which results in significant diffusion have been investigated. On most wafers, the average normalized threshold current density (J /SUB nom/ = J /SUB th/ /d) using either implant schedule has been typically 6-8 kA/cm/sup 2/ X ..mu..m. The lowest J /SUB nom/ observed was 4.2 kA/cm/sup 2/ X ..mu..m and was measured on a ''nondiffused'' implanted laser.

• Research Organization: Lincoln Lab., MIT, Lexington, MA 02173
• OSTI ID: 5862159
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 29:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM IONS
CHARGED PARTICLES
CRYSTAL DOPING
CURRENT DENSITY
CURRENTS
DIFFUSION
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
JUNCTIONS
LASERS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVELENGTHS
ZINC