GaInAsP/InP surface-emitting lasers with current confining structure

Journal Article · Tue Jul 01 04:00:00 EDT 1986 · J. Lightwave Technol.; (United States)

DOI:https://doi.org/10.1109/JLT.1986.1074790· OSTI ID:5014373

Uchiyama, S; Ohmae, Y; Iga, K; Shimizu, S

In order to reduce the threshold current of GaInAsP/InP surface-emitting (SE) lasers, an effective current confining structure is sought and several types are examined: round-low-mesa, round-high-mesa/ polyimide-buried, buried-heterostructure, and planar-buried-heterostructure. The minimum threshold current was reduced down to 18 mA at 77 K, and the threshold current density was estimated to be reduced to 3 kA/cm. The operating temperature has been raised to -10 C (263 K). The longitudinal-mode hopping was first observed for GaInAsP/InP SE lasers. The effective refractive index for GaInAsP/InP SE lasers was 4-5, which was almost the same as conventional edge-emitting lasers. 15 references.

• Research Organization: Tokyo Institute of Technology, Yokohama, Japan; Hitachi, Ltd., Yokohama, Japan
• OSTI ID: 5014373
• Journal Information: J. Lightwave Technol.; (United States), Journal Name: J. Lightwave Technol.; (United States) Vol. LT-4; ISSN JLTED
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
THRESHOLD CURRENT