Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasers

Journal Article · Wed May 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95824· OSTI ID:6176125

Uchiyama, S; Iga, K

A GaInAsP/InP surface emitting (SE) laser has been fabricated with a round mesa structure. The minimum threshold current was 35 mA (77 K) and the operating temperature was raised to -21 C. The characteristic temperature T0 was 100-120 K near 100 K, but decreased at higher temperatures. This is believed to be caused by the generation of heat at the p-side electrode. Room-temperature operation of the GaInAsP/InP SE laser is expected upon solving the ohmic contact problem. 7 references.

• Research Organization: Tokyo Institute of Technology, Yokohama, Japan
• OSTI ID: 6176125
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
ELECTRIC CURRENTS
ELECTRODES
LASERS
MATERIALS
P-TYPE CONDUCTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT