Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

Journal Article · Sat Dec 31 23:00:00 EST 1988 · IEEE Photonics Technol. Lett.; (United States)

DOI:https://doi.org/10.1109/68.87879· OSTI ID:6252518

Oshikiri, M; Kawasaki, H; Koyama, F; Iga, K

The authors have made a systematic study on changing the reflectivity of Si/SiO/sub 2/ mirror for 1.3 ..mu..m GaInAsP/InP surface emitting lasers. The effective threshold current of 4.5 mA at 77K continuous operation has been obtained. This indicates a possibility of a sub-mA threshold at 77K and greater than or equal to20m at 300K by optimizing the mirror reflectivity.

• Research Organization: Tokyo Institute of Technology, Research Lab. of PME, Nagatsuta, Midori-ku, Yokohama (JP)
• OSTI ID: 6252518
• Journal Information: IEEE Photonics Technol. Lett.; (United States), Journal Name: IEEE Photonics Technol. Lett.; (United States) Vol. 1:1; ISSN IPTLE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MATERIALS
LASER MIRRORS
LASERS
MATERIALS
MIRRORS
OPTICAL PROPERTIES
OPTIMIZATION
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SILICON COMPOUNDS
SILICON OXIDES
SURFACE PROPERTIES