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Consideration on threshold current density of GaInAsP/InP surface emitting junction lasers

Journal Article · · IEEE J. Quant. Electron.; (United States)
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The oscillation condition of the GaInAsP/InP surface emitting (SE) junction laser (lambda = 1.3 ..mu..m) is examined. Theoretical calculations indicate that reflectivity of the mirrors of a Fabry-Perot resonator is necessary to be 95 percent for a reasonably low threshold current density. Then, the authors fabricated a new structure for SE laser and compared its threshold current density with the theoretical estimation. In order to maintain the necessary reflectivity without deteriorating the ohmic contact, they adopted a ring electrode where the reflecting mirror is separated from the p-side electrode. The threshold current was reduced down to 35 mA at 77 K which is 70 percent of the early experiment. The threshold current density was estimated to be 5 kA/cm/sup 2/. The estimated reflectivity was 80-85 percent. The operating temperature has been raised to -21/sup 0/C (252 K). The temperature dependence of the threshold current near room temperature suggests that room temperature operation of GaInAsP/InP SE lasers is possible by increasing the reflectivity of mirrors and current confinement.
Research Organization:
Scientific Research Foundation, the Ministry of Education, Science, and Culture
OSTI ID:
6113605
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:2; ISSN IEJQA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CAVITY RESONATORS
CURRENT DENSITY
CURRENTS
ELECTRIC CURRENTS
ELECTRODES
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFEROMETERS
LASERS
LOW TEMPERATURE
MEASURING INSTRUMENTS
MIRRORS
OPTICAL PROPERTIES
OSCILLATIONS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
THRESHOLD CURRENT