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Novel technique for GaInAsP/InP buried heterostructure laser fabrication

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93182· OSTI ID:5805860
;
A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.
Research Organization:
Massachusetts Inst. of Technology, Lexington
OSTI ID:
5805860
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:7; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL MACHINING
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MACHINING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING