Low threshold GaInAsP/InP buried-heterostructure lasers with a chemically etched and mass-transported mirror

Journal Article · Tue May 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94606· OSTI ID:6875824

Liau, Z L; Walpole, J N; Tsang, D Z

The mass-transport technique has been used to improve chemically etched mirrors on GaInAsP/InP double heterostructure wafers. Vertical and flat mirror facets have been obtained. Buried-heterostructure lasers fabricated with one such mirror and the other mirror cleaved show high device yield with threshold currents as low as 6 mA and differential quantum efficiency as high as 33%.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6875824
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MIRRORS
NEUTRAL-PARTICLE TRANSPORT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD CURRENT