Low threshold GaInAsP/InP buried-heterostructure lasers with a chemically etched and mass-transported mirror

Journal Article · Tue May 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94606· OSTI ID:6875824

Liau, Z L; Walpole, J N; Tsang, D Z

The mass-transport technique has been used to improve chemically etched mirrors on GaInAsP/InP double heterostructure wafers. Vertical and flat mirror facets have been obtained. Buried-heterostructure lasers fabricated with one such mirror and the other mirror cleaved show high device yield with threshold currents as low as 6 mA and differential quantum efficiency as high as 33%.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6875824
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 44:10
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
MIRRORS
ETCHING
SEMICONDUCTOR LASERS
EFFICIENCY
FABRICATION
THRESHOLD CURRENT
ATOM TRANSPORT
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
NEUTRAL-PARTICLE TRANSPORT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)