GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen

Journal Article · Mon Mar 27 04:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100749· OSTI ID:6474017

Matsui, T; Sugimoto, H; Ohishi, T; Abe, Y; Ohtsuka, K; Ogata, H

A reactive ion etching method is applied to fabricate mirrors of 1.5 ..mu..m GaInAsP/InP mass transport lasers using a mixture of ethane and hydrogen as an etchant. Threshold currents as low as 35 mA are achieved for the 300-..mu..m-long cavity lasers with one etched and one cleaved facet. The differential quantum efficiencies of the lasers with one dry etched facet and both dry etched facets are 13 and 9.5%, respectively.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6474017
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:13; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKANES
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
ETCHING
ETHANE
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYDROCARBONS
HYDROGEN
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASER CAVITIES
LASER MIRRORS
LASERS
MIRRORS
NONMETALS
NUMERICAL DATA
ORGANIC COMPOUNDS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD CURRENT