GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch

Journal Article · Fri Aug 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91939· OSTI ID:5216240

Miller, B I; Iga, K

Monolithically etched-facet-mirror GaInAsP/InP stripe lasers (1.3 ..mu..m) were made using a wet chemical etching technique. Lasers with 20 ..mu..m stripes have current thresholds of 300 mA (room temperature, pulsed) about 50% higher than comparable cleaved-mirror lasers. Nearly single-mode operation up to 1.51/sub th/ has been achieved with a cavity length of approx.180 ..mu..m.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5216240
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 37:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
LASER MIRRORS
CHEMICAL REACTIONS
CLEAVAGE
COMPARATIVE EVALUATIONS
ETCHING
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
MEDIUM TEMPERATURE
OSCILLATION MODES
PULSES
SOLUTIONS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
DISPERSIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MICROSTRUCTURE
MIXTURES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)