GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch

Journal Article · Fri Aug 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91939· OSTI ID:5216240

Miller, B I; Iga, K

Monolithically etched-facet-mirror GaInAsP/InP stripe lasers (1.3 ..mu..m) were made using a wet chemical etching technique. Lasers with 20 ..mu..m stripes have current thresholds of 300 mA (room temperature, pulsed) about 50% higher than comparable cleaved-mirror lasers. Nearly single-mode operation up to 1.51/sub th/ has been achieved with a cavity length of approx.180 ..mu..m.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5216240
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CLEAVAGE
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DISPERSIONS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MIRRORS
LASERS
MEDIUM TEMPERATURE
MICROSTRUCTURE
MIXTURES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLUTIONS
SURFACE FINISHING