InGaAsP-InP planar-stripe lasers fabricated by wet chemical etching

Journal Article · Fri May 01 00:00:00 EDT 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329183· OSTI ID:6453676

Adachi, S; Kawaguchi, H

InGaAsP-InP planar-stripe lasers are fabricated monolithically, in which cavity mirrors are formed by wet chemical etching and planar stripes are aligned along the (100) direction. The lasers emit light at approx.1.5 ..mu..m. The lowest threshold current density of these lasers is almost the same as that of conventionally fabricated cleaved-mirror lasers.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6453676
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CLEAVAGE
COMPARATIVE EVALUATIONS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CURRENT DENSITY
DATA
ELECTROMAGNETIC RADIATION
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASER CAVITIES
LASERS
MICROSTRUCTURE
MIRRORS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
WAVELENGTHS