InGaAsP/InP buried-heterostructure lasers (lambda = 1. 5. mu. m) with chemically etched mirrors

Journal Article · Tue Sep 01 04:00:00 EDT 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329480· OSTI ID:6254929

Adachi, S; Kawaguchi, H; Takahei, K; Noguchi, Y

Buried-heterostructure InGaAsP/InP lasers with chemically etched mirrors are fabricated successfully. The lasers emit light at approx.1.5 ..mu..m. The threshold current of these lasers is nearly the same as that of conventionally fabricated cleaved-mirror lasers. This fabrication procedure enables us to obtain low-threshold-current devices and allows a much wide variety of device design and fabrication compared with the conventional cleaving technique.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6254929
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CLEAVAGE
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DESIGN
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MIRRORS
LASERS
MICROSTRUCTURE
MIRRORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING