Lasing characteristics of 0. 8-. mu. m InGaAsP/GaAs lasers fabricated by wet chemical etching
0.8-..mu..m InGaAsP/GaAs stripe lasers, in which cavity mirrors were formed by two-step wet chemical etching, have been fabricated monolithically. The laser resonators were aligned along the <011-bar> and the <010> directions. The first etching was done in 5% Br methanol. The secondary etching was done in H/sub 2/SO/sub 4/:H/sub 2/O/sub 2/:H/sub 2/O (3:1:1 by volume) etchant for the active layers only, and gave low threshold lasers. Their threshold current densities were compared with those of the cleaved-mirror lasers made from the same wafer. Some longitudinal lasing modes were observed in the wavelength range of 805--810 nm. The characteristic temperature T/sub 0/ was 116 K in the temperature range 28--87 /sup 0/C. The relationship between the state of the etched facets and the near- and far-field patterns was examined. It was found that this two-step etching technique for the laser mirrors is very suitable for aligning the lasers along desirable directions on the same wafer for monolithic integrated optical circuits.
- Research Organization:
- Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi, Yokohama 223, Japan
- OSTI ID:
- 6475755
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:10; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASER MIRRORS
LASERS
MIRRORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING