Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Orientational dependence of photoelectrochemical etching in n-GaAs

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2100424· OSTI ID:6604553

There has been considerable recent interest in photoelectrochemical etching for fabricating microstructures in semiconductors, particularly III-V materials. Yet, little attention has been paid to the orientational dependence of photoelectrochemical etching processes. In this paper, the authors demonstrate that photoelectrochemical etching of n-GaAs in mild electrolytes is dependent on crystalline orientation in a similar way that has been observed previously for chemical etchants such as bromine-methanol and the H/sub 2/SO/sub 4/-H/sub 2/O/sub 2/-H/sub 2/O system. The mild aqueous electrolytes permit etching with a much wider variety of photoresists than would be possible with chemical etchants. All experiments were performed on polished )100) n-GaAs surfaces (Si doped, N/sub d/ = 1.4 x 10/sup 17/) obtained from MA/COM Laser Diode Inc. Stripe patterns were defined in Shipley 1350J positive photoresist spun onto the crystal surface at a thickness of approximately 1 ..mu..m, and baked according to the manufacturer's instructions. Patterns were custom drawn using a computer controlled laser scanner, employing a HeCd laser operating at 442 nm. Typically, lines were 10-15 ..mu..m wide. Lines were produced in the (011), (011), and (010) directions.

Research Organization:
EIC Labs., Inc., Norwood, MA
OSTI ID:
6604553
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:1; ISSN JESOA
Country of Publication:
United States
Language:
English

Similar Records

Lasing characteristics of 0. 8-. mu. m InGaAsP/GaAs lasers fabricated by wet chemical etching
Journal Article · Mon May 15 00:00:00 EDT 1989 · J. Appl. Phys.; (United States) · OSTI ID:6475755

InP etchant for submicron patterns
Journal Article · Sun Nov 30 23:00:00 EST 1986 · J. Electrochem. Soc.; (United States) · OSTI ID:6633298

Effects of doping and orientation on photoelectrochemically etched features in n-GaAs
Journal Article · Wed Jul 01 00:00:00 EDT 1987 · J. Electrochem. Soc.; (United States) · OSTI ID:6038675