Effects of doping and orientation on photoelectrochemically etched features in n-GaAs

Journal Article · Wed Jul 01 00:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100769· OSTI ID:6038675

Carrabba, M M; Nguyen, N M; Rauh, R D

Photoelectrochemical etching of high aspect ratio mask-defined grooves in (100)n-GaAs is shown to be dependent on both crystallographic orientation and doping level. Structures etched along the (011) direction produced V grooves, showing that the (111)Ga surface is a stop plane with respect to oxidation by photogenerated holes. Other orientations etch more isotropically. In all cases, undercutting of the mask is associated with lateral diffusion of holes due to slow kinetics of consumption by the interfacial reaction. This effect is minimized in highly doped crystals, where high quality vertical walled gratings can be produced using visible light with aspect ratios of >10:1.

• Research Organization: EIC Labs., Inc., Norwood, MA 02062
• OSTI ID: 6038675
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:7; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
400500 -- Photochemistry
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CHEMISTRY
CRYSTAL DOPING
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
DIFFUSION
ELECTROCHEMISTRY
ELECTROMAGNETIC RADIATION
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAIN ORIENTATION
INTERFACES
ISOTROPY
KINETICS
MATERIALS
MICROSTRUCTURE
N-TYPE CONDUCTORS
ORIENTATION
OXIDATION
PHOTOCHEMISTRY
PNICTIDES
RADIATIONS
SEMICONDUCTOR MATERIALS
STRUCTURAL CHEMICAL ANALYSIS
SURFACE FINISHING
VISIBLE RADIATION