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Photoelectrochemical etching of blazed echelle gratings in n-GaAs

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2095526· OSTI ID:6237481

Photoelectrochemical etching can be a technique for producing microstructures in semiconductors with high aspect ratios and lateral uniformities. As an example of this application, the authors have reported recently on producing sawtooth Echelle diffraction gratings in (100) oriented crystals on n-GaAs using this method. These gratings are employed in a variety of electro-optical devices and in very high resolution spectrometers. Because of the large amount of material which must be removed in fabrication, they are difficult to produce with smooth walls by conventional ruling energies, particularly in the low groove densities frequently needed. The etching process relies on the orientation dependence of photoelectrochemical dissolution of GaAs, which favors the (111)As over the (111)Ga polar face, similar to some types of oxidative chemical etching. Etching in the (100) surface necessarily results in symmetrical groove profiles, while most optical applications of gratings require unsymmetrical blazed structures. It is the purpose of this communication to report the photoelectrochemical fabrication of blazed, deep gratings with crystallographic control of the blaze angle.

Research Organization:
EIC Labs., Inc., Norwood, MA (US)
OSTI ID:
6237481
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:12; ISSN JESOA
Country of Publication:
United States
Language:
English